JEOL 840A Scanning Electron Microscope and Electron Beam Lithography

The scanning electron microscope (SEM) JSM 840 is used for imaging samples with an 8 nm resolution. It is also equipped with a computer-controlled pattern generating system enabling the writing of patterns for devices with feature sizes as small as 50 nm.

Key Features:

• Acceleration voltage: up to 40 kV
• Filament type: Tungsten
• Beam size: ~ 8 nm at 35 kV
• Pattern design: DesignCad
• Pattern formation: Vector scan
• Pattern generating: Nabity Lithography system
• Beam blanker: 8 MHz electromagnetic

Usage

• The JEOL 840 is used as an electron beam lithography system to expose electron beam resists such as PMMA according to a computer generated pattern. The exposed resist is then used to delineate patterns on different materials depending on the research projects

Limitations and Restrictions

• Samples must be smaller than 20 mm in diameter.