Capacitance measurements are able to give information about charge configurations within a sample. There are currently many methods used to measure the capacitance of a semiconductor device over a large area. However, as devices become smaller it is becoming more important to characterize the local capacitance on a smaller scale as well. Using an external voltage supply integrated into the Digital Instrument’s AFM, we have developed a measurement of the relative local capacitances of a sample. These images were taken on a Si sample with alternating stripes of high and low p-type doping. The substrate is doped with 2x10¹⁶ boron/cm³. The 5 µ m wide stripes were implanted with a net doping density of 4x10¹⁷ boron/cm³. The topographical image and the capacitance image were taken concurrently over 40x40 µ m. As the left image shows, there is little or no surface topography, with surface irregularities rising less than 6 nm. However, as the right image shows, the technique is able to resolve changes of charge concentration of little more than one order of magnitude. The brighter and darker regions are the higher and lower doped regions, respectively.