W. M. Keck Microfabrication Facility
  CSM
MSU PA
MSU
Research Projects
 

Detecting domain wall position using giant magnetoresistance


R. D. Slater, J. A. Caballero, R. Loloee, W. P. Pratt, Jr.

Department of Physics and Astronomy and Center for Sensor Materials
Michigan State University

Device Structure Domain Wall Trapping Curve

Ono et al.[1] showed that current-in-plane giant magnetoresistance (MR) can be used to detect the trapping of a domain wall at a constriction in a long, narrow (sub-mm-wide) F/N/F spin valve, where F and N are ferromagnetic and non-magnetic metals, respectively. We have developed a new geometry (figure on the left) for detecting such domain wall trapping at a constriction in narrow F/N/F exchange-biased spin valves --- applying the current perpendicular to the plane (CPP) and only in the region of the constriction. A small superconducting-Nb contact provides uniform CPP current flow in the constriction region. We tested this idea using simple optical lithography. A Fe50Mn50/Co91Fe9(6 nm)/Cu(20)/ Co91Fe9 (6) spin valve was fabricated with 4-µm width, 40-µm length and a single 2-µm-wide constriction over which was centered a 4-µm-square top Nb contact. The figure on the right shows the CPP-MR during reversal of the "free" F-layer from the anti-parallel (AP) to parallel (P) state. The observed steps in the MR demonstrate the trapping of at least one domain wall in the constriction region. Such CPP-MR measurements should be able to detect small motions of a domain wall in the more ideal case of a sub-mm-wide strip where single walls may be trapped. We have now modified out experiments to use e-beam lithograpy. Using a bilayer to pattern an Al mask on our GMR multiplayer, we can ion-mill the multilayer into our notch-wire geometry.

[1] T. Ono et al., Appl. Phys. Lett. 72, 1116(1998).